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We present a Ge-on_Si CMOS image sensor with backside illumination for thenear-infrared electromagnetic waves, wavelengths range 300-1700nm, detectionessential for optical sensor technology. The micro-holes help to enhance theoptical efficiency and extend the range to the 1.7 microns wavelength. Wedemonstrate an optimization for the width and depth of the nano-holes formaximal absorption in the near infrared. We show a reduction in cross-talk byemploying thin Si oxide deep trench isolation in between the pixels. Finally,we show a 26-50 percent reduction in the device capacitance with theintroduction of a hole. Such CMOS-compatible Ge-on_Si sensor will enablehigh-density, ultra-fast and efficient near-infrared imaging.

Single Micro-hole per Pixel for Thin Ge-on-Si Image Sensor with Enhanced Sensitivity upto 1700 nm