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Structuring Si in arrays of vertical high aspect ratio pillars, ranging fromnanoscale to macroscale feature dimensions, is essential for producingfunctional interfaces for many applications. Arrays of silicon 3Dnanostructures are needed to realize photonic and phononic crystals,waveguides, metalenses, X-ray wavefront sensors, detectors, microstructures andarrays of Si pillars are used as bio-interfaces in neural activity recording,cell culture, microfluidics, sensing and on-chip manipulation. Here, we presenta new strategy for realizing arrays of protruding sharp Si nanopillars usingdisplacement Talbot lithography combined with metal-assisted chemical etching(MacEtch) in gas phase. With the double exposure of a linear grating mask inorthogonal orientations and the lift-off technique, we realized a catalystpattern of holes in a Pt thin film with a period of 1 {\mu}m and hole diameterin the range of 100-250 nm. MacEtch in gas phase by using vapor HF and oxygenfrom air allows to etch arrays of protruding Si nanopillars 200 nm-thick andaspect ratio in the range of 200 (pillar height/width) with an etching rate upto 1 {\mu}m/min. With the advantage of no stiction, no ion beam damage of theSi substrate, nanometric resolution and high fidelity of pattern transfer themethod is an easy-to-scale-up processing that can support the fabrication of Sipillars arrays for many valuable applications both at micro and nano-scale.

High aspect ratio arrays of Si nano-pillars using displacement Talbot lithography and gas-MacEtch