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In this work, the thermo-optic coefficient (TOC) of the silicon-richamorphous silicon carbide (a-SiC) thin film deposited by plasma-enhancedchemical vapor deposition is characterized. We found that the TOC of the filmincreases as its silicon content increases. A more than three-fold improvementin the TOC is measured, reaching a TOC as high as $1.88 \times 10^{-4} K^{-1}$,which is comparable to that of crystalline silicon. An efficient thermo-opticphase shifter has also been demonstrated by integrating the silicon-rich a-SiCmicro-ring structure with a NiCr heater. Its tuning efficiency $P_{\pi}$ as lowas 4.4 mW has been measured at an optical wavelength of 1550 nm. These findingsmake silicon-rich a-SiC a good material candidate for thermo-optic applicationsin photonic integrated circuits.

Efficient thermo-optic micro-ring phase shifter made of PECVD silicon-rich amorphous silicon carbide