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Pt ultrathin films on ferromagnetic insulators have been widely studied forspintronics applications, and magnetic moments of interface Pt atoms wereconsidered to be ferromagnetically ordered due to a magnetic proximity effect(MPE). An anomalous Hall effect (AHE) is usually used to examine anout-of-plane magnetic moments of the Pt layer. To tune ferromagnetic propertiesof an Pt ultrathin film, we fabricated electric double layer transistors on Ptthin films with thicknesses of 5.9 nm and 7.0 nm on a $\rm{CoFe_2O_4}$ (CFO)ferrimagnetic insulator. For the Pt (7.0 nm)/CFO sample, a hysteresis loop wasobserved in the anomalous Hall resistivity without the gate bias, and thecoercive field was tuned by applying the gate bias. For the Pt (5.9 nm)/CFOsample, a hysteresis loop was not observed without a gate bias, but was openedby applying a gate bias ($V\rm{_G} =$ $\pm$3 V). This indicated that thelong-range ferromagnetic ordering of magnetic moments in the Pt film wasswitched on and off by the electric field effect. The hysteresis loop wasobserved up to 19.5 K for a $V\rm{_G}$ of +3 V, while the AHE was observed upto approximately room temperature.

Tuning the hysteresis loop for the anomalous Hall effect in Pt ultrathin films on $\rm{CoFe_2O_4}$ by electrolyte gating