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We investigate ferroelectric- and resistive switching behavior in 18-nm-thickepitaxial BaTiO$_3$ (BTO) films in a modelelectrolyte-ferroelectric-semiconductor (EFS) configuration. The system isexplored for its potential as a ferroelectric microelectrode in bioelectronics.The BTO films are grown by pulsed laser deposition (PLD) on semiconductingNb-doped (0.5 wt\%) SrTiO$_{3}$ (Nb:STO) single crystal substrates. Theferroelectric properties of the bare BTO films are demonstrated bypiezoresponse force microscopy (PFM) measurements. Cyclic voltammetry (CV)measurements in EFS configuration, with phosphate buffered saline (PBS) actingas the liquid electrolyte top contact, indicate characteristic ferroelectricswitching peaks in the bipolar current-voltage loop. The ferroelectric natureof the observed switching peaks is confirmed by analyzing the current responseof the EFS devices to unipolar voltage signals. Moreover, electrochemicalimpedance spectroscopy (EIS) measurements indicate bipolar resisitive switchingbehavior of the EFS devices, which is controlled by the remanent polarizationstate of the BTO layer. Our results represent a constitutive step towards therealization of neuroprosthetic implants and hybrid neurocomputational systemsbased on ferroelectric microelectrodes.

Ferroelectricity and resistive switching in BaTiO$_3$ thin films with liquid electrolyte top contact for bioelectronic devices