English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Epitaxial growth and controllable doping of wafer-scale single-crystaltransition-metal dichalcogenides (TMDCs) are two central tasks for extendingMoore's law beyond silicon. However, despite considerable efforts, addressingsuch crucial issues simultaneously under two-dimensional (2D) confinement isyet to be realized. Here we design an ingenious epitaxial strategy tosynthesize record-breaking 4-inch single-crystal Fe-doped TMDCs monolayers onindustry-compatible c-plane sapphire without miscut angle. In-depthcharacterizations and theoretical calculations reveal that the introduction ofFe significantly decreases the formation energy of parallel steps on sapphiresurfaces and contributes to the edge-nucleation of unidirectional TMDCs domains(>99%). The ultrahigh electron mobility (~86 cm2 V -1 s-1) and remarkableon/off current ratio (~108) are discovered on 4-inch single-crystal Fe-MoS2monolayers due to the ultralow contact resistance and perfect Ohmic contactwith metal electrodes. This work represents a substantial leap in terms ofbridging the synthesis and doping of wafer-scale single-crystal 2Dsemiconductors without the need for substrate miscut, which should promote thefurther device downscaling and extension of Moore's law.

Fe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle