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We propose and study theoretically a new mechanism of electron-impurityscattering in doped seminconductors with large dielectric constant. It is basedupon the idea of \textit{vector} character of deformations caused in thecrystalline lattice by any point defects siting asymmetrically in the unitcell. In result, local lattice compression due to the elastic deformationsdecay as $1/r^2$ with distance from impurity. Electron scattering (due tostandard deformation potential) on such defects leads to low-temperaturemobility $\mu(n)$ scaling with electron density $n$ of the form $\mu(n) \propton^{-2/3}$ that is close to experimental observations on a number of relevantmaterials.

Low-temperature electron mobility in doped semiconductors with high dielectric constant