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We have been developing the SOI pixel detector ``INTPIX'' for space use andgeneral purpose applications such as the residual stress measurement of a railand high energy physics experiments. INTPIX is a monolithic pixel detectorcomposed of a high-resistivity Si sensor, a SiO2 insulator, and CMOS pixelcircuits utilizing Silicon-On-Insulator (SOI) technology. We have consideredthe possibility of using INTPIX to observe X-ray polarization in space. Whenthe semiconductor detector is used in space, it is subject to radiation damageresulting from high-energy protons. Therefore, it is necessary to investigatewhether INTPIX has high radiation tolerance for use in space. The INTPIX8 wasirradiated with 6 MeV protons up to a total dose of 2 krad at HIMAC, NationalInstitute of Quantum Science in Japan, and evaluated the degradation of theperformance, such as energy resolution and non-uniformity of gain and readoutnoise between pixels. After 500 rad irradiation, which is the typical lifetimeof an X-ray astronomy satellite, the degradation of energy resolution at 14.4keV is less than 10%, and the non-uniformity of readout noise and gain betweenpixels is constant within 0.1%.

Proton radiation damage tolerance of wide dynamic range SOI pixel detectors