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Fe3GeTe2 is a 2-dimensional van der Waals material exhibiting itinerantferromagnetism upto 230 K. Here, we study aspects of scattering mechanism inFe3Ge2Te2 single crystals via resistivity, magneto-transport and Hall effectmeasurements. The quadratic temperature dependence of electrical resistivitybelow the Curie temperature hints towards the dominance of electron-magnonscattering. A non-saturating positive magnetoresistance (MR) is observed at lowtemperatures when the magnetic field is applied parallel to the sample plane.The linear negative MR at high fields for T < TC corroborates to thesuppression in magnon population due to the damping of spin waves. In the hightemperature regime T > TC,MR can be described by the scattering from spinfluctuations using the model described by Khosla and Fischer. Isothermal Hallresistivity curves unveil the presence of anomalous Hall resistivity.Correlation between MR and side jump mechanism further reveals that theelectron-magnon scattering is responsible for the side jump contribution to theanomalous Hall effect. Our results provide a clear understanding of the role ofelectron-magnon scattering on anomalous Hall effect that rules out its originto be the topological band structure.

Dominance of Electron-Magnon Scattering in Itinerant Ferromagnet Fe3GeTe2