English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Charge noise is one of the main sources of environmental decoherence for spinqubits in silicon, presenting a major obstacle in the path towards highlyscalable and reproducible qubit fabrication.  Here we demonstrate in-depth characterization of the charge noise environmentexperienced by a quantum dot in a CMOS-fabricated silicon nanowire.  We probe the charge noise for different quantum dot configurations, findingthat it is possible to tune the charge noise over two orders of magnitude,ranging from 1 ueV^2 to 100 ueV^2. In particular, we show that the topinterface and the reservoirs are the main sources of charge noise and theireffect can be mitigated by controlling the quantum dot extension.  Additionally, we demonstrate a novel method for the measurement of the chargenoise experienced by a quantum dot in the few electron regime.  We measure a comparatively higher charge noise value of 40 ueV^2 at the firstelectron, and demonstrate that the charge noise is highly dependent on theelectron occupancy of the quantum dot.

Probing charge noise in few electron CMOS quantum dots