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The growth and characterization of Bismuth (Bi) substituted YIG (Bi-YIG,Bi0.1Y2.9Fe5O12) thin films are reported. Pulsed laser deposited (PLD) filmswith thicknesses ranging from 20 to 150 nm were grown on Gadolinium GalliumGarnet substrates. Two substrate orientations of (100) and (111) wereconsidered. The enhanced distribution of Bi3+ ions at dodecahedral site along(111) is observed to lead to an increment in lattice constant from 12.379angstrom in (100) to 12.415 angstrom in (111) oriented films. Atomic forcemicroscopy images showed decreasing roughness with increasing film thickness.Compared to (100) grown films, (111) oriented films showed an increase inferromagnetic resonance linewidth and consequent increase in Gilbert damping.The lowest Gilbert damping values are found to be (1.06) * 10E-4 for (100) and(2.30) * 10E-4 for (111) oriented films with thickness of 150 nm. The observedvalues of extrinsic linewidth, effective magnetization, and anisotropic fieldare related to thickness of the films and substrate orientation. In addition,the in-plane angular variation established four-fold symmetry for the (100)deposited films unlike the case of (111) deposited films. This study prescribesgrowth conditions for PLD grown single-crystalline Bi-YIG films towards desiredhigh frequency and magneto-optical device applications.

Growth parameters of Bi0.1Y2.9Fe5O12 thin films for high frequency applications