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Thin crystalline layers of TaAs Weyl semimetal (9 and 18 nm thick) are grownby molecular beam epitaxy on GaAs(001) substrates. The (001) planes of thetetragonal TaAs lattice are parallel to the GaAs(001) substrate, but thecorresponding in-plane crystallographic directions of the substrate and thelayer are rotated by 45{\deg}. In spite of a substantial lattice mismatch(about 19%) between GaAs(001) substrate and TaAs epilayer no misfitdislocations are observed at the GaAs(001)/TaAs(001) interface. Only stackingfault defects in TaAs are detected with transmission electron microscopy.Thorough X-ray diffraction measurements and analysis of the in-situ reflectionhigh energy electron diffraction images indicates that TaAs layers are fullyrelaxed already at the initial deposition stage. Atomic force microscopyimaging reveals the columnar structure of the layers, with lateral (parallel tothe layer surface) columns about 20 nm wide and 200 nm long. Both X-raydiffraction and transmission electron microscopy measurements indicate that thecolumns share the same orientation and crystalline structure.

Structural properties of TaAs Weyl semimetal thin films grown by molecular beam epitaxy on GaAs(001) substrates