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Tin Selenide (SnSe) thin films were grown onto glass and alumina substratesby Chemical Vapor Deposition (CVD) method. The structural, micro-structural andmorphological characterizations of the as grown thin films were investigatedusing XRD, SEM and Raman spectroscopy which reveals that the films on glass arephase pure oriented SnSe while those on Alumina are polycrystalline SnSe withSnSe2 impurity phase. The optical properties of the films grown onto glasssubstrate were studied by UV-vis spectroscopy. The optical band gap calculatedis 1 to 1.3 eV for indirect and direct transition in film deposited on glasssubstrates. The Arrhenius plots of the two films show very different thermalactivations i.e. 0.088 eV for tin vacancy acceptor level close to valance bandmaxima in pure SnSe and 0.44 eV for mid gap selenium vacancies of SnSe2.Photoresponse was observed by illuminating the sample (Glass and aluminaSubstrate) using white and UV light (400 nm) for a fixed time pulses. Thedeposited onto Alumina substrate were found to show better photoresponse due toSnSe/SnSe2 p-n heterojunctions.

CVD Growth of Tin Selenide Thin Films for Optoelectronic Applications