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The IR response of a backside illuminated type Yttrium Barium Copper Oxide(YBCO) transition-edge bolometer (TEB) in a free-membrane configuration ismeasured and analyzed. The analysis is based on a comprehensive equivalentcircuit model for the bolometer structure considering all the thermalparameters of the device. The detector is made using a 450nm superconductiveYBCO thin film grown on about 100 um thick crystalline SrTiO3 (STO) substrateusing an optimized low cost Metal Organic Deposition (MOD) technique. Thebackside illuminated structure provided a basis for freely utilizing differentIR absorber materials and structures on the backside of the bolometer in orderto get wide band high radiation absorption coefficient for the device, whilealso avoiding any negative effect of the deposition of the absorber layer onthe YBCO thin film properties. The obtained analytical and experimental resultsfor the backside illuminated bolometer were also compared with the results ofthe previously reported front-side illuminated bolometers.

Frequency Response Analysis of Backside Illuminated Free-Membrane Type IR Superconducting Bolometer