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Multiferroic (MF) devices based on simultaneous ferroelectric andferromagnetic phenomena are considered to be promising candidates for futurebi-functional micro/nano-electronics. The multiferroic phenomena intwo-dimensional materials is rarely reported in literature. We reported asimple approach to reveal frequency-dependent ferroelectricity andmutiferroicity in Ti$_3$C$_2$T$_x$ MXene film at room-temperature. To study thefrequency and poling effect on ferroelectricity as well as multiferroicity, weperformed electric polarization vs. electric field measurement at differentexternal frequencies measured under zero and non-zero static magnetic fields.In order to further investigate this effect, the magneto-electric (ME) couplingwas also performed to confirm the multiferroic nature of our synthesizedTi$_3$C$_2$T$_x$ MXene film. The ferroelectric hysteresis effect was attributedto the switching of electric domain walls under low frequencies that continueto respond to at much extent to the higher frequencies. The coupling betweendisordered electric dipoles with local spin moments could cause presence ofstrong magneto-electric coupling. Moreover, the bipolar resistive switching intrilayer memory devices also supports the ferroelectric behavior of HT-Ti$_3$C$_2$T$_x$ MXene film and showed uniform repeatability in switchingbehavior due to minimum dielectric loss inside ferroelectricHT-Ti$_3$C$_2$T$_x$ MXene along with improved on/off ratio in comparison tonon-ferroelectric Ti$_3$C$_2$T$_x$ MXene. The unique multiferroic behavioralong with ferroelectric-tuned memristor devices reported here at roomtemperature will help understand the intrinsic nature of 2D materials and willestablish novel data storage devices.

Multiferroic Ti$_3$C$_2$T$_x$ MXene with Tunable Ferroelectric-controlled High Performance Resistive Memory Devices