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Electrical static random memory (E-SRAM) is the current standard for internalstatic memory in Field Programmable Gate Array (FPGA). Despite the dramaticimprovement in E-SRAM technology over the past decade, the goal of ultra-fast,energy-efficient static random memory has yet to be achieved with E-SRAMtechnology. However, preliminary research into optical static random accessmemory (O-SRAM) has shown promising results in creating energy-efficientultra-fast static memories.  This paper investigates the advantage of O-SRAM over E-SRAM in access speedand energy performance while executing sparse Matricized Tensor TimesKhatri-Rao Product (spMTTKRP). spMTTKRP is an essential component of tensordecomposition algorithms which is heavily used in data science applications.The evaluation results show O-SRAMs can achieve speeds of 1.1x - 2.9x whilesaving 2.8x - 8.1x energy compared to conventional E-SRAM technology.

Performance Modeling Sparse MTTKRP Using Optical Static Random Access Memory on FPGA