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Basic vacancy defects in twodimensional silicon carbide (2D-SiC) are examinedby means of density functional theory calculations to explore theirmagneto-optical properties as well as their potential in quantum technologies.In particular, the characteristic hyperfine tensors and optical excited statesof carbon-vacancy, silicon-vacancy, and carbon antisite-vacancy pair defects in2D-SiC are determined that are the key fingerprints of these defects that maybe observed in electron paramagnetic resonance and photoluminescenceexperiments, respectively. Besides the fundamental characterization of the mostbasic native defects, we show that the negatively charged carbonantisite-vacancy defect is a promising candidate for realizing a near-infraredsingle-photon quantum emitter with spin doublet ground state, where thenegative charge state may be provided by nitrogen doping of 2D-SiC. We findthat the neutral carbon-vacancy with spin triplet ground state might be usedfor quantum sensing with a broad emission in the visible.

Vacancy-related color centers in twodimensional silicon carbide monolayers