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The nanowire-supported quantum dot (NWQD) of GaN is an unconventionalnanostructure, which is extremely promising for realization of UV photonics ingeneral, and room-temperature single photon generation, in particular. WhileGaN-NWQDs have several promising attributes, the crucial challenge inexploiting their full potential, is to reduce the lateral dimensions of theQDs, to the order of the exciton Bohr-radius in GaN. Also critical is tosuppress the built-in electric field due to spontaneous and piezoelectricpolarization, which adversely affects the radiative recombination lifetime. Wereport here the innovation of a simple yet powerful single-step epitaxialgrowth technique, to achieve both of these targets. By combining controlled andon-demand thermal decomposition of GaN nanowires, with our previously-developedstrategy of inhibiting the same via AlN-capping, we demonstrate that theNWQD-diameter can indeed be reduced to the truly strong-quantum-confinementlimit. In these ultra-scaled GaN QDs, we show that the built-in electric fieldsare almost completely suppressed. The NWQD fabrication-strategy developed inthis work may pave the way for fabrication of highly efficient classical andquantum UV-emitters based on GaN.

Scaling nanowire-supported GaN quantum dots to the sub-10-nm limit, yielding complete suppression of the giant built-in potential