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We report on electrical gating of the charge-density-wave phases and currentin h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It isdemonstrated that the application of a gate bias can shift the source-draincurrent-voltage hysteresis associated with the transition between the nearlycommensurate and incommensurate charge-density wave phases. The evolution ofthe hysteresis and the presence of abrupt spikes in the current while sweepingthe gate voltage suggest that the effect is electrical rather thanself-heating. We attribute the gating to an electric-field effect on thecommensurate charge-density-wave domains in the atomic planes near the gatedielectric. The transition between the nearly commensurate and incommensuratecharge-density-wave phases can be induced by both the source-drain current andthe electrostatic gate. Since the charge-density-wave phases are persistent in1T-TaS2 at room temperature, one can envision memory applications of suchdevices when scaled down to the dimensions of individual commensurate domainsand few-atomic plane thicknesses.

Electrical Gating of the Charge-Density-Wave Phases in Quasi-2D h-BN/1T-TaS$_2$ Devices