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This paper presents the measurements on first very thin Ultra Fast SiliconDetectors (UFSDs) produced by Fondazione Bruno Kessler; the data have beencollected in a beam test setup at the CERN PS, using beam with a momentum of 12GeV/c. UFSDs with a nominal thickness of 25 $\mu$m and 35 $\mu$m and an area of1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additionalHPK 50-$\mu$m thick sensor, taken as reference. Their timing performances havebeen studied as a function of the applied voltage and gain. A time resolutionof about 25 ps and of 22 ps at a voltage of 120 V and 240 V has been obtainedfor the 25 and 35 $\mu$m thick UFSDs, respectively.

Beam test results of 25 $\mu$m and 35 $\mu$m thick FBK UFSD]{Beam test results of 25 $\mu$m and 35 $\mu$m thick FBK ultra fast silicon detectors