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The ability to engineer atomically thin nanoscale lateral heterojunctions(HJs) is critical to lay the foundation for future two-dimensional (2D) devicetechnology. However, the traditional approach to creating a heterojunction bydirect growth of a heterostructure of two different materials constrains theavailable band offsets, and it is still unclear if large built-in potentialsare attainable for 2D materials. The electronic properties of atomically thinsemiconducting transition metal dichalcogenides (TMDs) are not static, andtheir exciton binding energy and quasiparticle band gap depend strongly on theproximal environment. Recent studies have shown that this effect can beharnessed to engineer the lateral band profile of monolayer TMDs to create aheterojunction. Here we demonstrate the synthesis of a nanoscale lateralheterojunction in monolayer MoSe2 by intercalating Se at the interface of ahBN/Ru(0001) substrate. The Se intercalation creates a spatially abruptmodulation of the local hBN/Ru work function, which is imprinted directly ontoan overlying MoSe2 monolayer to create a large built-in potential of 0.83 eV.We spatially resolve the MoSe2 band profile and work function using scanningtunneling spectroscopy to map out the nanoscale depletion region. The Seintercalation also modifies the dielectric environment, influencing the localband gap renormalization and increasing the MoSe2 band gap by ~0.26 eV. Thiswork illustrates that environmental proximity engineering provides a robustmethod to indirectly manipulate the band profile of 2D materials outside thelimits of their intrinsic properties, providing avenues for future devicedesign.

Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential