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A scalable spin-based quantum processor requires a suitable semiconductorheterostructure and a gate design, with multiple alternatives beinginvestigated. Characterizing such devices experimentally is a demanding task,with the full development cycle taking at least months. While numericalsimulations are more time-efficient, their predictive power is limited due tounavoidable disorder and device-to-device variation. We develop a spin-qubitdevice simulation for determining the distribution of the coupling strengthsbetween the electrostatic gate potentials and the effective device Hamiltonianin presence of disorder. By comparing our simulation results with theexperimental data, we demonstrate that the coupling of the gate voltages to thedot chemical potential and the interdot tunnel coupling match up todisorder-induced variance. To demonstrate the flexibility of our approach, wealso analyze an alternative non-planar geometry inspired by FinFET devices.

Impact of disorder on the distribution of gate coupling strengths in a spin qubit device