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Transition-metal dichalcogenides (TMDCs) are an aspiring class of materialswith unique electronic and optical properties and potential applications inspin-based electronics. Here, we use terahertz emission spectroscopy to studyspin-to-charge current conversion (S2C) in the TMDC NbSe$_2$ inultra-high-vacuum-grown F|NbSe$_2$ thin-film stacks, where F is a layer offerromagnetic Fe or Ni. Ultrafast laser excitation triggers an ultrafast spincurrent that is converted into an in-plane charge current and, thus, ameasurable THz electromagnetic pulse. The THz signal amplitude as a function ofthe NbSe$_2$ thickness shows that the measured signals are fully consistentwith an ultrafast optically driven injection of an in-plane-polarized spincurrent into NbSe$_2$. Modeling of the spin-current dynamics reveals that asizable fraction of the total S2C originates from the bulk of NbSe$_2$ with thesame, negative, sign as the spin Hall angle of pure Nb. By quantitativecomparison of the emitted THz radiation from F|NbSe$_2$ to F|Pt referencesamples and the results of ab-initio calculations, we estimate that the spinHall angle of NbSe$_2$ for an in-plane polarized spin current lies between-0.2% and -1.1%, while the THz spin-current relaxation length is of the orderof a few nanometers.

Terahertz spin-to-charge current conversion in stacks of ferromagnets and the transition-metal dichalcogenide NbSe$_2$