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Several emission features mark semiconductor quantum dots as promisingnon-classical light sources for prospective quantum implementations. Forlong-distance transmission [1] and Si-based on-chip processing[2, 3], thepossibility to match the telecom C-band [4] stands out, while source brightnessand high single-photon purity are key features in virtually any quantumimplementation [5, 6]. Here we present an InAs/InGaAs/GaAs quantum dot emittingin the telecom C-band coupled to a circular Bragg grating. The Purcellenhancement of the emission enables a simultaneously high brightness with afiber-coupled single-photon count rate of 13.9MHz for an excitation repetitionrate of 228MHz (first-lens collection efficiency ca. 17% for NA = 0.6), whilemaintaining a low multi-photon contribution of g(2)(0) = 0.0052. Moreover, thecompatibility with temperatures of up to 40K attainable with compact cryocoolers, further underlines the suitability for out-of-the-lab implementations.

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band