English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated onc-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilizedzirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD).The structural and surface morphological properties are investigated bycomprehensive material characterization. Phase pure \k{appa}-Ga2O3 films aresuccessfully grown on GaN-, AlN-on sapphire, and YSZ substrates through asystematical tuning of the growth parameters including the precursor molar flowrates, chamber pressure and growth temperature, whereas the growth onc-sapphire substrates leads to a mixture of \b{eta}- and \k{appa}polymorphs ofGa2O3 under the investigated growth conditions. The influence of thecrystalline structure, surface morphology and roughness of \k{appa}-Ga2O3 filmsgrown on different substrates are investigated as a function of precursor flowrate. High resolution scanning transmission electron microscopy (HR-STEM)imaging of \k{appa}-Ga2O3 films reveals abrupt interfaces between the epitaxialfilm and the sapphire, GaN and YSZ substrates. The growth of single crystalorthorhombic \k{appa}Ga2O3 films is confirmed by analyzing the STEMnano-diffraction pattern. The chemical composition, surface stoichiometry, andthe bandgap energies of \k{appa}-Ga2O3 thin films grown on different substratesare studied by high resolution x-ray photoelectron spectroscopy (XPS)measurements. The type-II (staggered) band alignments at three interfacesbetween \k{appa}-Ga2O3 and c-sapphire, AlN, and YSZ substrates are determinedby XPS, with the exception of \k{appa}-Ga2O3/GaN interface, which shows type I(straddling) band alignment.

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates