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We present GaSb-based interband cascade lasers emitting at a centerwavelength of 6.12 $\mu$m at 20$^\circ$C in continuous-wave operation up to amaximum operating temperature of 40$^\circ$C. Pulsed measurements based onbroad area devices show improved performance by applying the recently publishedapproach of adjusting the GaInSb layer thickness in the active region to reducethe valence intersubband absorption. The W-quantum well design adjustment andthe optimization of the electron injector, to rebalance the electron and holeconcentrations in the active quantum wells, improved the device performance,yielding room temperature current densities as low as 0.5 kA/cm$^2$ for broadarea devices under pulsed operation. As a direct result of this improvement thelong wavelength limit for GaSb-based ICLs in continuous wave operation could beextended. For an epi-side down mounted 23 $\mu$m wide and 2 mm long device with9 active stages and high-reflectivity back facet the threshold power is below 1W and the optical output power is over 25 mW at 20$^\circ$C in continuous-wavemode. Such low-threshold and low-power consumption interband cascade lasers areespecially attractive for mobile and compact sensing systems.

Pushing the room temperature continous-wave operation limit of GaSb-based interband cascade lasers beyond 6 $\mu$m