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The use and the study of semi-insulating layers on metals and semiconductorssurfaces have found continuous interest in the past decades. So far, thecontrol of the sizes and growth location of the insulating islands on thesubstrate is either ill-defined or usually constrained to the use ofevaporation masks which size can easily exceed tenth of nanometers. Here, weshow that it is possible to grow self-organized periodically spaced thinribbons of semi-insulating stripes on the bare Si(100) surface. The epitaxialgrowth of these structures is obtained by the evaporation of CaF$_2$ moleculeson the silicon surface with a coverage of 1.2 monolayers. They are investigatedvia scanning tunneling techniques at low temperature (9K). The obtained ribbonsexhibit a surface bandgap of ~3.2 eV as well as a resonant state at the centralpart of the ribbons at ~2.0 eV below the Fermi level energy. The use of thedensity functional theory allows suggesting a model structure of the observedribbons and reproducing the experimental STM topographies. The formation of thethin ribbons is discussed and we point out the influence of the mechanicalforces inside and between the structures that may influence their periodicity.

Periodically Spaced CaF$_2$ Semi-Insulating Thin Ribbons Growth Study on the Si(100) Surface