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Interfaces formed by correlated oxides offer a critical avenue fordiscovering emergent phenomena and quantum states. However, the fabrication ofoxide interfaces with variable crystallographic orientations and strain statesintegrated along a film plane is extremely challenge by conventionallayer-by-layer stacking or self-assembling. Here, we report the creation ofmorphotropic grain boundaries (GBs) in laterally interconnected cobaltitehomostructures. Single-crystalline substrates and suspended ultrathinfreestanding membranes provide independent templates for coherent epitaxy andconstraint on the growth orientation, resulting in seamless and atomicallysharp GBs. Electronic states and magnetic behavior in hybrid structures arelaterally modulated and isolated by GBs, enabling artificially engineeredfunctionalities in the planar matrix. Our work offers a simple and scalablemethod for fabricating unprecedented innovative interfaces through controlledsynthesis routes as well as provides a platform for exploring potentialapplications in neuromorphics, solid state batteries, and catalysis.

Braiding lateral morphotropic grain boundary in homogeneitic oxides