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We report on large exciton tuning in WSe$_2$ monolayers via substrate inducednon-degenerate doping. We observe a redshift of $\sim$62 meV for the $A$exciton together with a 1-2 orders of magnitude photoluminescence (PL)quenching when the monolayer WSe$_2$ is brought in contact with highly orientedpyrolytic graphite (HOPG) compared to the dielectric substrates such as hBN andSiO$_2$. As the evidence of doping from HOPG to WSe$_2$, a drastic increase ofthe trion emission intensity was observed. Using a systematic PL and Kelvinprobe force microscopy (KPFM) investigation on WSe$_2$/HOPG, WSe$_2$/hBN, andWSe$_2$/graphene, we conclude that this unique excitonic behavior is induced byelectron doping from the substrate. Our results propose a simple yet efficientway for exciton tuning in monolayer WSe$_2$, which plays a central role in thefundamental understanding and further device development.

Exciton tuning in monolayer WSe$_2$ via substrate induced electron doping