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Advanced exfoliation techniques are crucial for exploring the intrinsicproperties and applications of 2D materials. Though the recently discoveredAu-enhanced exfoliation technique provides an effective strategy forpreparation of large-scale 2D crystals, the high cost of gold hinders thismethod from being widely adopted in industrial applications. In addition,direct Au contact could significantly quench photoluminescence (PL) emission in2D semiconductors. It is therefore crucial to find alternative metals that canreplace gold to achieve efficient exfoliation of 2D materials. Here, we presenta one-step Ag-assisted method that can efficiently exfoliate many large-area 2Dmonolayers, where the yield ratio is comparable to Au-enhanced exfoliationmethod. Differing from Au film, however, the surface roughness of as-preparedAg films on SiO2/Si substrate is much higher, which facilitates the generationof surface plasmons resulting from the nanostructures formed on the rough Agsurface. More interestingly, the strong coupling between 2D semiconductorcrystals (e.g. MoS2, MoSe2) and Ag film leads to a unique PL enhancement thathas not been observed in other mechanical exfoliation techniques, which can bemainly attributed to enhanced light-matter interaction as a result of extendedpropagation of surface plasmonic polariton (SPP). Our work provides alower-cost and universal Ag-assisted exfoliation method, while at the sameoffering enhanced SPP-matter interactions.

One-step exfoliation method for plasmonic activation of large-area 2D crystals