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Successful commercialization of Perovskite/Si tandem solar cells (P/Si TSCs)need a-priori estimation of technological benchmarks to outperform c-Si basedtechnologies under field conditions. To this end, through detailed numericalsimulations and analytical modeling, here we identify the limits of ionmigration and lifetime degradation till which P/Si TSCs remain competitive. Ourresults unravel a unique scaling law for the evolution of the efficiency andthe temperature coefficient of P/Si TSCs which allows us to anticipate thelimiting annual degradation rates. Interestingly, we find that 4T cells arepotentially more immune to the ill effects of ion migration as compared to 2Tcells. These insights are of broad relevance for material/interface engineeringapproaches and physics based accelerated tests which are focused towards longterm stability and module reliability.

Prospects for Perovskite/Silicon tandem solar cells to outperform c-Silicon solar cells at elevated temperatures