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A detailed study of charge transport in the paramagnetic phase ofHo0.8Lu0.2B12 strongly correlated antiferromagnet was carried out attemperatures 1.9-300 K in magnetic fields up to 80 kOe. Four mono-domain singlecrystals with different orientation of normal vectors to the lateral surface ofHo0.8Lu0.2B12 samples were investigated in order to establish the changes inHall effect due to the anisotropy, induced by (i) the electronic phaseseparation (dynamic charge stripes) and (ii) formation of the disorderedcage-glass state below 60 K. It was demonstrated that in magnetic fields above40 kOe directed along the 001 and 110 axes in fcc crystals a considerableintrinsic anisotropic positive component Ranxy appears in addition to theordinary negative Hall resistivity contribution. The relation Ranxy prop. Ranxx1.7 was found between anomalous components of the resistivity tensor for Halong 001 below 60 K, and the power law Ranxy prop. Ranxx 0.83 was detected forthe orientation H along 110 at temperatures T below TS about 15 K. It is arguedthat below TS about 15 K the anomalous odd Ranxy(T) and even Ranxx(T) parts ofthe resistivity tensor may be interpreted in terms of formation of a large sizeclusters in the filamentary structure of fluctuating charges (stripes). Weassume that these Ranxy(001) and Ranxy(110) components represent the intrinsic(Berry phase contribution) and extrinsic (skew scattering) mechanism,respectively. An additional ferromagnetic contribution to anomalous Hall effect(AHE) for both ordinary and anisotropic components in Hall signal wasregistered and attributed to the effect of magnetic polarization of 5d states(ferromagnetic nano-domains) in the conduction band of Ho0.8Lu0.2B12.

Hall effect anisotropy in the paramagnetic phase of Ho0.8Lu0.2B12 induced by dynamic charge stripes