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The concept of alloy engineering has emerged as a viable technique towardstuning the bandgap as well as engineering the defect levels in two-dimensionaltransition metal dichalcognides (TMDC). Possibility to synthesize theseultrathin TMDC materials through chemical route has opened realisticpossibilities to fabricate hybrid multi-functional devices. By synthesizingnanosheets with different composites of MoS$_{2x}$Se$_{2(1-x)}$ (x = 0 to 1)using simple chemical methods, we systematically investigate the photo responseproperties of three terminal hybrid devices by decorating large area graphenewith these nanosheets (x = 0, 0.5, 1) in 2D-2D configurations. Among them,graphene-MoSSe hybrid phototransistor exhibits superior optoelectronicproperties than its binary counterparts. The device exhibits extremely highphotoresponsivity (>10$^4$ A/W), low noise equivalent power (~10$^{-14}$W/Hz$^{0.5}$), higher specific detectivity (~ 10$^{11}$ Jones) in the wideUV-NIR (365-810 nm) range with excellent gate tunability. The broadband lightabsorption of MoSSe, ultrafast charge transport in graphene, along withcontrollable defect engineering in MoSSe makes this device extremelyattractive. Our work demonstrates the large area scalability with wafer-scaleproduction of MoS$_{2x}$Se$_{2(1-x)}$ alloys, having important implicationtowards facile and scalable fabrication of high-performance optoelectronicdevices and providing important insights into the fundamental interactionsbetween van-der-Waals materials.

High performance Broadband Photodetection Based on Graphene -- MoS$_{2x}$Se$_{2(1-x)}$ Alloy Engineered Phototransistors