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Oxide two-dimensional electron gases (2DEGs) promise high charge carrierconcentrations and low-loss electronic transport in semiconductors such asBaSnO$_{3}$ (BSO). ACBN0 computations for BSO/SrNbO$_{3}$ (SNO) interfaces showNb-4$\textit{d}$ electron injection into extended Sn-5$\textit{s}$ electronicstates. The conduction band minimum consists of Sn-5$\textit{s}$ states ~1.2 eVbelow the Fermi level for intermediate thickness 6-unit cell BSO/6-unit cellSNO superlattices, corresponding to an electron density in BSO of ~10$^{21}$cm$^{-3}$. Experimental studies of analogous SNO/BSO interfaces grown bymolecular beam epitaxy confirm significant charge transfer from SNO to BSO.$\textit {In situ}$ angle-resolved X-ray photoelectron spectroscopy studiesshow an electron density of ~4 $\times$ 10$^{21}$ cm$^{-3}$. The consistency oftheory and experiment shows that BSO/SNO interfaces provide a novel materialsplatform for low loss electron transport in 2DEGs.

High Mobility Two-Dimensional Electron Gas at the BaSnO$_{3}$/SrNbO$_{3}$ Interface