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Layer-polarized anomalous Hall effect (LP-AHE), derived from the couplingbetween Berry curvature and layer degree of freedom, is of importance for bothfundamental physics and device applications. Nonetheless, the current researchparadigm is rooted in topological systems, rendering such phenomenon ratherscarce. Here, through model analysis, we propose an alternative, but generalmechanism to realize the LP-AHE in valleytronic van der Waals bilayers byinterlayer sliding. The interaction between the out-of-plane ferroelectricityand A-type antiferromagnetism gives rise to the layer-locked Berry curvatureand thus the long-sought LP-AHE in the bilayer systems. The LP-AHE can bestrongly coupled with sliding ferroelectricity, to enable ferroelectricallycontrollable and reversible. The mechanism is demonstrated in a series of realvalleytronic materials, including bilayer VSi2P4, VSi2N4, FeCl2, RuBr2 andVClBr. The new mechanism and phenomena provide a significant new direction torealize LP-AHE and explore its application in electronics.

Layer-Polarized Anomalous Hall Effect in Valleytronic van der Waals Bilayers