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Background: Edge-on-irradiated silicon detectors are currently beinginvestigated for use in photon-counting CT applications. The low atomic numberof silicon leads to a significant number of incident photons being Comptonscattered in the detector, depositing a part of their energy and potentiallybeing counted multiple times. Although the physics of Compton scatter is wellestablished, the effects of Compton interactions in the detector on imagequality for an edge-on-irradiated silicon detector have still not beenthoroughly investigated.  Purpose: To investigate and explain effects of Compton scatter onzero-frequency DQE for photon-counting CT using edge-on-irradiated silicondetectors.  Methods: We extend an existing Monte Carlo model of an edge-on-irradiatedsilicon detector to develop projection and image domain performance metrics forpure density and pure spectral imaging tasks. We show that the lowest energythreshold of the detector can be used as an effective discriminator of primarycounts and cross-talk caused by Compton scatter. We study the developed metricsas functions of the lowest threshold energy.  Results: Density imaging performance decreases monotonically as a function ofthe lowest threshold in both projection and image domains. Spectral imagingperformance has a plateau between 0 and 10 keV and decreases monotonicallythereafter, in both projection and image domain.  Conclusions: Compton interactions contribute significantly to the densityimaging performance of edge-on-irradiated silicon detectors. With the studieddetector topology, the benefit of counting primary Compton interactionsoutweighs the penalty of multiple counting at all lower threshold energies.Compton interactions also contribute significantly to the spectral imagingperformance for measured energies above 10 keV.

The effects of intra-detector Compton scatter on zero-frequency DQE for photon-counting CT using edge-on-irradiated silicon detectors