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Digital camera sensors utilize color filters on photodiodes to achieve colorselectivity. As color filters and photosensitive silicon layers are separateelements, these sensors suffer from optical cross-talk, which sets limits tothe minimum pixel size. In this paper, we report hybrid silicon-aluminumnanostructures in the extreme limit of zero distance between color filters andsensors. This design could essentially achieve sub micron pixel dimensions andminimize the optical cross-talk originated from tilt illuminations. Thedesigned hybrid silicon-aluminum nanostructure has dual functionalities.Crucially, it supports a hybrid Mie-plasmon resonance of magnetic dipole toachieve the color-selective light absorption, generating electron hole pairs.Simultaneously, the silicon-aluminum interface forms a Schottky barrier forcharge separation and photodetection. This design could potentially replace thetraditional dye based filters for camera sensors at ultra-high pixel densitieswith advanced functionalities in sensing polarization and directionality, aswell as UV selectivity via interband plasmons of silicon.

Miniaturizing Color-Sensitive Photodetectors via Hybrid Nanoantennas towards Sub-micron Dimensions