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Monolithic integration of quantum dot (QD) gain materials onto Si photonicplatforms via direct epitaxial growth is a promising solution for on-chip lightsources. Recent developments have demonstrated superior device reliability inblanket hetero-epitaxy of III-V devices on Si at elevated temperatures. Yet,thick, defect management epi designs prevent vertical light coupling from thegain region to the Si-on-Insulator (SOI) waveguides. Here, we demonstrate thefirst electrically pumped QD lasers grown on a 300 mm patterned (001) Si waferwith a butt-coupled configuration by molecular beam epitaxy (MBE). Uniquegrowth and fabrication challenges imposed by the template architecture havebeen resolved, contributing to continuous wave lasing to 60 {\deg}C and amaximum double-side output power of 126.6 mW at 20 {\deg}C with a double-sidewall plug efficiency of 8.6%. The potential for robust on-chip laser operationand efficient low-loss light coupling to Si photonic circuits makes thisheteroepitaxial integration platform on Si promising for scalable and low-costmass production.

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers