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Negative Electron Affinity (NEA) activated GaAs photocathodes are the mostpopular option for generating a high current (> 1 mA) spin-polarized electronbeam. Despite its popularity, a short operational lifetime is the main drawbackof this material. Recent works have shown that the lifetime can be improved byusing a robust Cs-Sb-O NEA layer with minimal adverse effects. In this work, weoperate GaAs photocathodes with this new activation method in a high voltageenvironment to extract a high current. We observed spectral dependence on thelifetime improvement. In particular, we saw a 45% increase in the lifetime at780 nm for Cs-Sb-O activated GaAs compared to Cs-O activated GaAs.

Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current