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The existence of chiral edge states, corresponding to the nontrivialbulk-band topology characterized by a non-vanishing topological invariant, andthe manipulation of topological transport via chiral edge states promisetopological electronic/spintronic device applications. Here we predict theexistence, practical realization, topological protection, and topologicalswitching of spin-gapless valley-filtered chiral edge states, representing anovel topological Dirac spin-gapless/half-metal phase in antiferromagnetichoneycomb structures terminated on zigzag edges. We demonstrate that thisphenomenon is realizable if a perpendicular (transverse) electric field isapplied in zigzag nanoribbons with an antiferromagnetic ordering on theboundary (in the bulk), and the Weber-Fechner type nonlinear behavior isoptimizable by a transverse (perpendicular) electric field. The existence ofspin-gapless valley-filtered chiral edge states, their correspondence withnontrivial topological character in the bulk, and electric-field-drivenswitching of their spin-polarization that is accompanied by switching ofbulk-band topology promise a new strategy for topological spintronics withoutspin-orbit interaction.

Topological Dirac Spin-Gapless Materials -- New Horizon for Topological Spintronics Without Spin-Orbit Interaction