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Isolated impurity states in epitaxially grown semiconductor systems possessimportant radiative features such as distinct wavelength emission with a veryshort radiative lifetime and low inhomogeneous broadening which makes thempromising for the generation of indistinguishable single photons. In thisstudy, we investigate chlorine-doped ZnSe/ZnMgSe quantum well (QW) nanopillar(NP) structures as a highly efficient solid-state single-photon sourceoperating at cryogenic temperatures. We show that single photons are generateddue to the radiative recombination of excitons bound to neutral Cl atoms inZnSe QW and the energy of the emitted photon can be tuned from about 2.85 downto 2.82 eV with ZnSe well width increase from 2.7 to 4.7 nm. Following thedeveloped advanced technology we fabricate NPs with a diameter of about 250 nmusing a combination of dry and wet-chemical etching of epitaxially grownZnSe/ZnMgSe QW well structures. The remaining resist mask serves as aspherical- or cylindrical-shaped solid immersion lens on top of NPs and leadsto the emission intensity enhancement by up to an order of magnitude incomparison to the pillars without any lenses. NPs with spherical-shaped lensesshow the highest emission intensity values. The clear photon-antibunchingeffect is confirmed by the measured value of the second-order correlationfunction at a zero time delay of 0.14. The developed single-photon sources aresuitable for integration into scalable photonic circuits.

Efficient, Spectrally Tunable Single-Photon Sources Based on Chlorine-Doped ZnSe Nanopillars