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Two-dimensional materials (2DMs) meet the demand of broadband and low-costphotodetection on silicon for many applications. Currently, it is still verychallenging to realize excellent silicon-2DM PDs. Here we demonstrategraphene-silicon-graphene waveguide PDs operating at the wavelength-bands of1.55 {\mu}m and 2 {\mu}m, showing the potential for large-scale integration.For the fabricated PDs, the measured responsivities are respectively ~0.15 mA/Wand ~0.015 mA/W for the wavelengths of 1.55 {\mu}m and 1.96{\mu}m. Inparticular, the PDs exhibit a high bandwidth of ~33 GHz, an ultra-low darkcurrent of tens of pico-amperes, a high normalized photo-to-dark-current ratio(NPDR) of 1.63x10^6 W^-1, as well as a high linear dynamic range of 3{\mu}W-1.86 mW (and beyond) at 1.55 {\mu}m. According to the measurementresults for the wavelength-bands of 1.55/2.0 {\mu}m and the theoreticalmodeling for the silicon-graphene heterostructure, it is revealed that internalphoto-emission and photo-assisted thermionic field emission dominantlycontribute to the photoresponse in the graphene-silicon Schottky junctions,which helps the future work to further improve the performance.

High-speed graphene-silicon-graphene waveguide PDs with high photo-to-dark-current ratio and large linear dynamic range