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Perpendicular synthetic antiferromagnets (SAFs) are of interest for the nextgeneration ultrafast, high density spintronic memory and logic devices.However, to energy efficiently operate their magnetic order by current-inducedspin orbit torques (SOTs), an unfavored high external field is conventionallyrequired to break the symmetry. Here, we theoretically and experimentallydemonstrate the field-free SOT switching of a perpendicular SAF through theintroduction of interlayer Dzyaloshinskii-Moriya interaction (DMI). Bymacro-spin simulation, we show that the speed of field-free switching increaseswith the in-plane mirror asymmetry of injected spins. We experimentally observethe existence of interlayer DMI in our SAF sample by an azimuthal angulardependent anomalous Hall measurement. Field-free switching is accomplished insuch a sample and the strength of the effective switching field demonstratesits origin from interlayer DMI. Our results provide a new strategy for SAFbased high performance SOT devices.

Field-free spin orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interaction