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We developed a beam telescope system comprising five layers of300-$\mu$m-thick INTPIX4NA monolithic pixel sensors with each pixel size of 17$\mu$m square. The sensors were fabricated using silicon-on-insulator (SOI)technology. The signal-to-noise ratio of 140--230 is realized at a bias voltageof 20~V. The tracker system was tested using a positron beam of 200--822 MeV/c,and various tracking methods are examined to optimize spatial precisionachievable at these energies. The best tracking precision including theprecision of the sensor under test itself is 11.04 $\pm$ 0.10 $\mu$m for822-MeV/c positrons for an equidistant sensor spacing of 32 mm. The achievedprecision results combined with the intrinsic spatial resolution value obtainedfor a similar system using 120 GeV protons are used to estimate the trackingperformance of electrons in the GeV energy range; a tracking precision of 2.22$\mu$m is evaluated for 5-GeV electrons. The method to estimate the trackingperformance is verified using a Geant4-based simulation. The developed highprecision tracker system enables to map the detailed performance of the sensorswith pixel sizes of $\mathcal{O}$(10 $\mu$m), therefore will be a powerfulsystem for development of devices targeting precision position resolutions.

Precision beam telescope based on SOI pixel sensor technology for electrons in the energy range of sub-GeV to GeV