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Interlayer excitons (IXs) formed at the interface of atomically-thinsemiconductors possess various novel properties. In a parallel development,nanoscale strain engineering has emerged as an effective means for creating 2Dquantum light sources. Exploring the intersection of these two exciting areas,where strain and defects are exploited for the manipulation of IX toward theemergence of new functionalities, is currently at a nascent stage. Here, usingMoS2/WSe2 heterostructure as a model system, we demonstrate how strain,defects, and layering can be utilized to create defect-bound IXs capable ofbright, robust, and tunable quantum light emission in the technologicallyimportant near-infrared spectral range. We were able to achieve ultra-highsingle-photon purity with g(2)(0) = 0.01. Our strategy of creatingsite-controlled QEs from the defect-bound IXs represents a paradigm shift in 2Dquantum photonics research, from engineering intralayer exciton in monolayerstructures towards IXs at the interface of 2D heterostructures.

Manipulating Interlayer Excitons for Ultra-pure Near-infrared Quantum Light Generation