English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Emerging devices such as a neuromorphic device and a qubit can use the Motttransition phenomenon, but in particular, the diverging mechanism of thephenomenon remains to be clarified. The diverging-effective mass near Mottinsulators was measured in strongly correlated Mott systems such as a fermion$^3$He and a Si metal-oxide-semiconductor-field-effect transistor, and isclosely fitted by the effective mass obtained by the extension of theBrinkman-Rice(BR) picture,$m^*/m=1/[1-(U/U_c)^2]=1/(1-{\kappa}^2_{BR}{\rho}^4)$ when${\kappa}^2_{BR}{\approx}1({\neq}$1), where $0<U/U_c={\kappa}_{BR}{\rho}^2<1$,correlation strength is ${\kappa}_{BR}$, band-filling is ${\rho}$. Itsidentification is a percolation of a constant mass in the Brinkman-Ricepicture. Over ${\kappa}_{BR}{\approx}0.96$ is evaluated.

Identifying diverging-effective mass in MOSFET and $^3$He systems