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The Mn2Ge2Te6 shows intrinsic ferromagnetic (FM) order, with Curietemperature (Tc) of 316 K. The FM order origins from superexchange interactionbetween Mn and Te atoms. Mn2Ge2Te6 is half-metal (HM), and spin-\b{eta}electron is a semiconductor with gap of 1.462 eV. Mn2Ge2Te6 tends in-planeanisotropy (IPA), with magnetic anisotropy energy (MAE) of -13.2 meV/f.u.. TheMn2Ge2Te6 shows good dynamical and thermal stability. Moreover, Mn2Ge2Te6presents good ferromagnetic and half-metallic stability under charge doping.The carriers doping could effectively tune magnetic and electronic properties.Specifically, the magnetic moment, exchange parameter, and MAE could beefficiently tuned. The total magnetic moment changes linearly with chargesdoping. The exchange parameters could be controlled by the doping carriers. Thecarriers doping could modulate MAE to -18.4 (+0.4 e), -0.85 (-1.6 e), 1.31(-2.4 e) meV/f.u., by changing hybridization between Te atoms' py and pzorbitals. Mn2Ge2Te6 with intrinsic ferromagnetism, high tunable MAE, goodstability of ferromagnetism and half-metallicity could help researchers toinvestigate its wide application in the electronics and spintronics.

Carrier Doping Modulates 2D Intrinsic Ferromagnetic Mn2Ge2Te6 Monolayer High Curie Temperature, Large Magnetic Crystal Anisotropy