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This work represents integration of MTJ with 30nm FinFET for low voltageanalog write operations and readout optimization for the p-bit or true randomnumber generator (TRNG), where the induced p-bit, the probabilistic state ofthe magnetic tunnel junction (MTJ), is detected within only a singlecomputational period. The period contains two sub-cycles: write and joined read& reset cycles. The operation with MTJ becomes stochastic, independent aftercalibrating at the desired working point against the factors, which can inducethe signal deviations, e.g. temperature, material degradation or externalmagnetic field.

3T-1R Analog Write and Digital Read of MRAM for RNG and Low Power Memory Application