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Currently, Sb$_2$Se$_3$ thin films receive considerable research interest asa solar cell absorber material. When completed into a device stack, the majorbottleneck for further device improvement is the open circuit voltage, which isthe focus of the work presented here. Polycrystalline thin film Sb$_2$Se$_3$absorbers and solar cells are prepared in substrate configuration and thedominant recombination path is studied using photoluminescence spectroscopy andtemperature dependent current-voltage characteristics. It is found that apost-deposition annealing after the CdS buffer layer deposition can effectivelyremove interface recombination since the activation energy of the dominantrecombination path becomes equal to the bandgap of the Sb$_2$Se$_3$ absorber.The increased activation energy is accompanied by an increasedphotoluminescence yield, i.e. reduced non-radiative recombination. FinishedSb$_2$Se$_3$ solar cell devices reach open circuit voltages as high as 485 mV.Contrarily, the short-circuit current density of these devices is limiting theefficiency after the post-deposition annealing. It is shown that atomic layerdeposited intermediate buffer layers such as TiO$_2$ or Sb$_2$Se$_3$ can pavethe way for overcoming this limitation.

Post-deposition annealing and interfacial ALD buffer layers of  Sb$_2$Se$_3$/CdS stacks for reduced interface recombination and increased  open-circuit voltages