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We propose an electrically pumped laser diode based on multiple HgTe quantumwells with band structure engineered for Auger recombination suppression. Amodel for accounting for hot phonons is developed for calculating thenonequilibrium temperature of electrons and holes. Using a comprehensive modelaccounting for carrier drift and diffusion, Auger recombination and hotphononeffects, we predict of lasing at $\lambda \sim 3 $ $\mu$m at room temperaturein 2.2 nm HgTe/Cd$_{0.85}$Hg$_{0.15}$Te quantum well heterostructure. Theoutput power in the pulse can reach up to 600 mW for 100 nanosecond-durationpulses.

Hot phonon effects and suppressed Auger recombination on 3 $\mu$m room temperature lasing in HgTe-based multiple quantum well diodes